Electro-thermal Simulations of Strained-Si MOSFETs under ESD conditions
نویسندگان
چکیده
Electro-thermal characteristics of strained-Si MOSFETs operating in high-current, high temperature regimes were investigated using device/circuit mixed mode simulations. The material parameters of strained-Si were calibrated for device simulations. Especially the phonon mean-free-path of strained-Si with high electric fields was estimated based on a full-band Monte Carlo device simulation. Despite the low thermal conductivity of buried SiGe layers, strained-Si devices show superior ElectroStatic Discharge (ESD) protection capability compared to unstrained-Si (bulkSi) devices due to the high bipolar current gain and increased impact ionization rate.
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